Using methods of thermal vacuum evaporation and magnetron sputtering, amorphous and polycrystalline films of intermetallic compounds of systems Fe-Gd and Sc-Cu were obtained. Complex electron diffraction and electrophysical examinations of condensates were carried out for different types substrates and different condensing temperatures.

In particular:

• Temperature of substrate and mode of deposition influence on forming of a condensate is explored.
• The kinetics of crystallization of amorphous films is investigated.
• The proximate interatomic distances in amorphous condensates are estimated.
• Decoding of structure for polycrystal samples carried out.
• Determined that annealing in vacuum at temperatures smaller 600 K does not result in crystallization.
• Specific resistances of films obtained were gauged under different technological conditions. Essential effect of deposition conditions is discovered.
• In the range 300-500 К temperature dependences were built for an electrical conductivity of amorphous and polycrystalline films. They had a semiconductor or metal course of conductance depending on methods of reception and mode of deposition.
• The temperature coefficient of resistance and energy of thermal activation were calculated.
• Effect of annealing on an electrical conductivity is explored. The magnification of a specific resistance is detected. This fact could be explained by formation of nanocrystalline seeds in an amorphous matrix which gives in increase of localization of such seeds.
• In the range 300-450 К temperature dependences of thermoelectric power were built.
• The type of carriers was determined. In all cases it there were electrons.