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Proceedings of 1995 IEEE
Region 10 International Conference on Microelectronics and VLSI
(TENCON '95),
IEEE, Hong Kong, pp. 85-88, 1995.
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Impurity Induced Disordering Produced Lateral
Optical Confinement in AlGaAs and InGaAs (on GaAs)
Quantum Well Waveguides
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Alex T. H. Li, K. M. Lo, and E. Herbert Li
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Abstract:
Impurity induced disordering technique is
employed to an AlGaAs/GaAs quantum well optical waveguide
to provide lateral optical confinement.
The modal propagation constant and field profile
are analysed using an improved Fourier
decomposition method.
Single mode operating region are given in
terms of thickness of quantum well layers.