Infrared Applications of Semiconductors II, D. L. McDaniel, Jr., M. O. Manasreh, R. H. Miles and S. Sivananthan, eds., Material Research Society Symposium Proceeding (MRS 1997 Fall Meeting, Boston, MA), vol. 484, pp. 467-472, 1998.

Analysis of AlGaAs/AlGaAs Multiple Quantum Well Dual Waveguides Defined by Ion Implantation Induced Intermixing

Kai-Ming Lo

Abstract: A simple and accurate model is presented for the study of ion-implanted AlGaAs/GaAs multi-quantum well dual waveguides. The impurity induced disordering defined multi-quantum well dual waveguides are shown to have similar optical properties as conventional dielectric rib waveguides. They also provide a more flexible control over the waveguiding and coupling characteristics by changing parameters such as diffusion time, ion implant energy, mask width, and waveguide separation.

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Mail to: kmlo88@yahoo.com

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